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| STP100NF04 STB100NF04, STB100NF04-1 N-CHANNEL 40V - 0.0043 - 120A TO-220/D2PAK/I2PAK STripFETTM II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE STP100NF04 STB100NF04 STB100NF04-1 s s s VDSS 40 V 40 V 40 V RDS(on) < 0.0046 < 0.0046 <0.0046 ID 120 A 120 A 120 A Pw 300 W 300 W 300 W 12 3 TYPICAL RDS(on) = 0.0043 STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO-220 I2PAK 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS ORDERING INFORMATION SALES TYPE STP100NF04 STB100NF04T4 STB100NF04-1 MARKING P100NF04 B100NF04 B100NF04 PACKAGE TO-220 D2PAK I2PAK PACKAGING TUBE TAPE & REEL TUBE February 2002 1/15 STP100NF04, STB100NF04, STB100NF04-1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (#) ID IDM (l) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Value 40 40 20 120 120 480 300 2 6 1.2 -55 to 175 Unit V V V A A A W W/C V/ns J C (l) Pulse width limited by safe operating area (1) I SD 120A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX. (2) Starting T j = 25C, I d = 60A, VDD=30 V (#) Current Limited by Package THERMAL DATA TO-220 / I2PAK / D2PAK Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max Thermal Resistance Junction-ambient (Free air) Max Maximum Lead Temperature For Soldering Purpose 0.5 See Curve on page 6 62.5 300 C/W C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 50 A 2 0.0043 Min. 40 1 10 100 4 0.0046 Typ. Max. Unit V A A nA V 2/15 STP100NF04, STB100NF04, STB100NF04-1 ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V, ID = 50 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 150 5100 1300 160 Max. Unit S pF pF pF SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 20 V, ID = 60 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 32V, ID = 120 A, VGS = 10V (see, Figure 4) Min. Typ. 35 220 110 35 35 150 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 20 V, ID = 60 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) Min. Typ. 80 50 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A, VGS = 0 ISD = 120 A, di/dt = 100A/s VDD = 20V, Tj = 150C (see test circuit, Figure 5) 75 185 5 Test Conditions Min. Typ. Max. 120 480 1.3 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/15 STP100NF04, STB100NF04, STB100NF04-1 Power Derating vs Tc Max Id Current vs Tc Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/15 STP100NF04, STB100NF04, STB100NF04-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown voltage vs Temperature 5/15 STP100NF04, STB100NF04, STB100NF04-1 Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area Safe Operating Area Thermal Impedance 6/15 STP100NF04, STB100NF04, STB100NF04-1 Allowable Iav vs. Time in Avalanche The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the Allowable Current in Avalanche PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse) tAV is the Time in Avalanche To derate above 25 C, at fixed IAV, the following equation must be applied: IAV = 2 * (Tjmax - TCASE) / (1.3 * BV DSS * Zth) Where: Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV. 7/15 STP100NF04, STB100NF04, STB100NF04-1 SPICE THERMAL MODEL Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 Node 5-4 4-3 3-2 2-1 Value 0.011 0.0012 0.05 0.1 RTHERM1 RTHERM2 RTHERM3 RTHERM4 5-4 4-3 3-2 2-1 0.09 0.02 0.11 0.17 8/15 STP100NF04, STB100NF04, STB100NF04-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 3.1: Inductive Load Switching And Diode Recovery Times Waveform Fig. 4: Gate Charge test Circuit Fig. 4.1: Gate Charge test Waveform 9/15 STP100NF04, STB100NF04, STB100NF04-1 Fig. 5: Test Circuit For Diode Recovery Times Fig. 5.1: Diode Recovery Times Waveform 10/15 STP100NF04, STB100NF04, STB100NF04-1 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 11/15 STP100NF04, STB100NF04, STB100NF04-1 D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 12/15 3 1 STP100NF04, STB100NF04, STB100NF04-1 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. A C2 B2 B E L1 L2 D L P011P5/E e A1 C 13/15 STP100NF04, STB100NF04, STB100NF04-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W 14/15 BASE QTY 1000 mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 * on sales type STP100NF04, STB100NF04, STB100NF04-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 15/15 |
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